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e PTB 20177 150 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20177 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 26 Volt, 960 MHz Characteristics - Output Power = 150 Watts (PEP) - Collector Efficiency = 50 Min at 150 Watts - IMD = -28 dBc Max at 150 Watts (PEP) Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 200 Output Power (Watts) 160 120 80 201 77 LOT COD E VCC = 26 V 40 0 0 5 10 15 20 25 30 ICQ = 400 mA Total f = 960 MHz Input Power (Watts) Package 20224 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 60 4.0 25.0 330 1.89 -40 to +150 0.53 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20177 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 55 3.5 20 Typ 30 70 5 50 Max -- -- -- 100 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 150 W, ICQ = 400 mA Total, f = 960 MHz) Gain at PEP (VCC = 26 Vdc, Pout = 150 W(PEP), ICQ = 400 mA Total, f = 960 MHz) Collector Efficiency (VCC = 26 Vdc, Pout = 150 W, ICQ = 400 mA Total, f = 960 MHz) Collector Efficiency at PEP (VCC = 26 Vdc, Pout = 150 W(PEP), ICQ = 400 mA Total, f = 960 MHz) Intermodulation Distortion (VCC = 26 Vdc, Pout = 150 W(PEP), ICQ = 400 mA Total, f1 = 959.9 MHz, f2 = 960.0 MHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 150 W(PEP), ICQ = 400 mA Total, f = 960 MHz--all phase angles at frequency of test) IMD -- -30 -28 dBc Symbol Gpe Min 7.5 Typ 8.5 Max -- Units dB Gpe 8 9 -- dB C 50 -- -- % C 35 -- -- % -- -- 5:1 -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 150 W, ICQ = 400 mA Total ) Z Source Z Load Frequency MHz 925 940 960 R 4.3 4.1 3.7 Z Source jX -3.6 -3.6 -3.4 2 R 3.8 3.5 3.1 Z Load jX -1.8 -1.4 -0.9 5/19/98 e Typical Performance Output Power vs. Supply Voltage 180 PTB 20177 Gain vs. Frequency (as measured in a broadband circuit) 11 Output Power (Watts) 170 160 VCC = 26 V 10 140 130 120 110 100 17 19 21 23 25 27 Gain (dB) 150 ICQ = 400 mA Total Pout = 150 W 9 ICQ = 400 mA Total Pin = 20 W f = 960 MHz 8 7 925 930 935 940 945 950 955 960 Vcc, Supply Voltage Frequency (MHz) Efficiency vs. Output Power 60 50 Intermodulation Distortion vs. Power Output -20 VCC = 26 V -24 ICQ = 400 mA Total f1 = 959.90 MHz f2 = 960.00 MHz Efficiency (%) 40 30 20 10 0 70 85 100 115 130 145 160 IMD (dBc) -28 -32 -36 -40 60 70 VCC = 26 V ICQ = 400 mA Total f = 960 MHz 80 90 100 110 120 130 140 150 Output Power (Watts) Output Power (Watts-PEP) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20177 Uen Rev. C 09-28-98 3 5/19/98 |
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